Vishay Semiconductor Diodes Division - VS-20ETF12PBF

KEY Part #: K6445469

VS-20ETF12PBF Pricing (USD) [2097PC Stock]

  • 1 pcs$1.86416
  • 10 pcs$1.67378
  • 25 pcs$1.58264
  • 100 pcs$1.37155
  • 250 pcs$1.30121
  • 500 pcs$1.10770
  • 1,000 pcs$0.93420

Nimewo Pati:
VS-20ETF12PBF
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1.2KV 20A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-20ETF12PBF electronic components. VS-20ETF12PBF can be shipped within 24 hours after order. If you have any demands for VS-20ETF12PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-20ETF12PBF Atribi pwodwi yo

Nimewo Pati : VS-20ETF12PBF
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.2KV 20A TO220AC
Seri : -
Estati Pati : Discontinued at Digi-Key
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 400ns
Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -40°C ~ 150°C

Ou ka enterese tou
  • C2D05120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 17.5A TO252.

  • VS-20ETF04FPPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 20A TO220FP.

  • BAT54WH6327XTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT323.

  • IDB23E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 41A TO263-3.

  • IDB12E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 28A TO263-3.

  • IDB45E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 71A TO263-3.