[2483PC Stock]
- Nimewo Pati:
- RQJ0303PGDQA#H6
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET P-CH 30V 3.3A 3MPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RQJ0303PGDQA#H6 electronic components. RQJ0303PGDQA#H6 can be shipped within 24 hours after order. If you have any demands for RQJ0303PGDQA#H6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQJ0303PGDQA#H6 Atribi pwodwi yo
Nimewo Pati :
RQJ0303PGDQA#H6
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET P-CH 30V 3.3A 3MPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
68 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
+10V, -20V
Antre kapasite (Ciss) (Max) @ Vds :
625pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-MPAK
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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