CSD16556Q5B Pricing (USD) [89066PC Stock]
- 1 pcs$0.45120
- 2,500 pcs$0.44896
- Nimewo Pati:
- CSD16556Q5B
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 25V 100A 8VSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD16556Q5B electronic components. CSD16556Q5B can be shipped within 24 hours after order. If you have any demands for CSD16556Q5B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD16556Q5B Atribi pwodwi yo
Nimewo Pati :
CSD16556Q5B
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 25V 100A 8VSON
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.07 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
1.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6180pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.2W (Ta), 191W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSONP (5x6)
Pake / Ka :
8-PowerTDFN
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