Vishay Siliconix - SI7956DP-T1-E3

KEY Part #: K6523088

SI7956DP-T1-E3 Pricing (USD) [52486PC Stock]

  • 1 pcs$0.74498
  • 3,000 pcs$0.69732

Nimewo Pati:
SI7956DP-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 150V 2.6A PPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7956DP-T1-E3 electronic components. SI7956DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7956DP-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7956DP-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI7956DP-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 150V 2.6A PPAK SO-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A
RD sou (Max) @ Id, Vgs : 105 mOhm @ 4.1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 26nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 1.4W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual

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