Nimewo Pati :
IRF5810TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2P-CH 20V 2.9A 6-TSOP
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.9A
RD sou (Max) @ Id, Vgs :
90 mOhm @ 2.9A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
650pF @ 16V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
6-TSOP