Taiwan Semiconductor Corporation - TSM60NB600CP ROG

KEY Part #: K6397018

TSM60NB600CP ROG Pricing (USD) [167210PC Stock]

  • 1 pcs$0.22120

Nimewo Pati:
TSM60NB600CP ROG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET N-CHANNEL 600V 7A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM60NB600CP ROG Atribi pwodwi yo

Nimewo Pati : TSM60NB600CP ROG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET N-CHANNEL 600V 7A TO252
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 516pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 63W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252, (D-Pak)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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