IRL640SPBF Pricing (USD) [44961PC Stock]
- 1 pcs$0.78603
- 10 pcs$0.70826
- 100 pcs$0.56916
- 500 pcs$0.44267
- 1,000 pcs$0.34695
- Nimewo Pati:
- IRL640SPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 200V 17A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRL640SPBF electronic components. IRL640SPBF can be shipped within 24 hours after order. If you have any demands for IRL640SPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL640SPBF Atribi pwodwi yo
Nimewo Pati :
IRL640SPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 200V 17A D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
17A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 5V
RD sou (Max) @ Id, Vgs :
180 mOhm @ 10A, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
66nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
1800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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