Nimewo Pati :
SSM6J801R,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 6A 6-TSOP-F
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
32.5 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
12.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
840pF @ 10V
Disipasyon Pouvwa (Max) :
1.5W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSOP-F
Pake / Ka :
6-SMD, Flat Leads