TP65H035WS Pricing (USD) [4802PC Stock]
- 1 pcs$9.02045
- Nimewo Pati:
- TP65H035WS
- Manifakti:
- Transphorm
- Detaye deskripsyon:
- GANFET N-CH 650V 46.5A TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Transphorm TP65H035WS electronic components. TP65H035WS can be shipped within 24 hours after order. If you have any demands for TP65H035WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TP65H035WS Atribi pwodwi yo
Nimewo Pati :
TP65H035WS
Manifakti :
Transphorm
Deskripsyon :
GANFET N-CH 650V 46.5A TO247-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
46.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
12V
RD sou (Max) @ Id, Vgs :
41 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1500pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
156W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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