[13481PC Stock]
- Nimewo Pati:
- RDN100N20
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 200V 10A TO-220FN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RDN100N20 electronic components. RDN100N20 can be shipped within 24 hours after order. If you have any demands for RDN100N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RDN100N20 Atribi pwodwi yo
Nimewo Pati :
RDN100N20
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 200V 10A TO-220FN
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
360 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
543pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220FN
Pake / Ka :
TO-220-3 Full Pack
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