Infineon Technologies - IPP80R750P7XKSA1

KEY Part #: K6398781

IPP80R750P7XKSA1 Pricing (USD) [50279PC Stock]

  • 1 pcs$0.76930
  • 10 pcs$0.69572
  • 100 pcs$0.55908
  • 500 pcs$0.43486
  • 1,000 pcs$0.34083

Nimewo Pati:
IPP80R750P7XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 800V 7A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPP80R750P7XKSA1 electronic components. IPP80R750P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP80R750P7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80R750P7XKSA1 Atribi pwodwi yo

Nimewo Pati : IPP80R750P7XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 800V 7A TO220-3
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 750 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 140µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 460pF @ 500V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 51W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3

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