NXP USA Inc. - PHB152NQ03LTA,118

KEY Part #: K6411413

[13799PC Stock]


    Nimewo Pati:
    PHB152NQ03LTA,118
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 25V 75A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PHB152NQ03LTA,118 electronic components. PHB152NQ03LTA,118 can be shipped within 24 hours after order. If you have any demands for PHB152NQ03LTA,118, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PHB152NQ03LTA,118 Atribi pwodwi yo

    Nimewo Pati : PHB152NQ03LTA,118
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 25V 75A D2PAK
    Seri : TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 25V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
    RD sou (Max) @ Id, Vgs : 4 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 3140pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 150W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB