Nimewo Pati :
IPU80R900P7AKMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 800V 6A TO251-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
900 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 110µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 500V
Disipasyon Pouvwa (Max) :
45W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO251-3
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA