Infineon Technologies - IPU80R900P7AKMA1

KEY Part #: K6400708

IPU80R900P7AKMA1 Pricing (USD) [61934PC Stock]

  • 1 pcs$0.65642
  • 10 pcs$0.58283
  • 100 pcs$0.46075
  • 500 pcs$0.33799
  • 1,000 pcs$0.26684

Nimewo Pati:
IPU80R900P7AKMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 800V 6A TO251-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Infineon Technologies IPU80R900P7AKMA1 electronic components. IPU80R900P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R900P7AKMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPU80R900P7AKMA1 Atribi pwodwi yo

Nimewo Pati : IPU80R900P7AKMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 800V 6A TO251-3
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 110µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 500V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 45W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO251-3
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA