[1982PC Stock]
- Nimewo Pati:
- SIE876DF-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 60V 60A POLARPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIE876DF-T1-GE3 electronic components. SIE876DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE876DF-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE876DF-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIE876DF-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 60V 60A POLARPAK
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
5.2W (Ta), 125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
10-PolarPAK® (L)
Pake / Ka :
10-PolarPAK® (L)
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