IXTA1R6N100D2HV Pricing (USD) [36141PC Stock]
- 1 pcs$1.08188
- Nimewo Pati:
- IXTA1R6N100D2HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA1R6N100D2HV electronic components. IXTA1R6N100D2HV can be shipped within 24 hours after order. If you have any demands for IXTA1R6N100D2HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA1R6N100D2HV Atribi pwodwi yo
Nimewo Pati :
IXTA1R6N100D2HV
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.6A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
0V
RD sou (Max) @ Id, Vgs :
10 Ohm @ 800mA, 0V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
645pF @ 10V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263HV
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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