[3507PC Stock]
- Nimewo Pati:
- PMN50XP,165
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 20V 4.8A 6TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMN50XP,165 electronic components. PMN50XP,165 can be shipped within 24 hours after order. If you have any demands for PMN50XP,165, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMN50XP,165 Atribi pwodwi yo
Nimewo Pati :
PMN50XP,165
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET P-CH 20V 4.8A 6TSOP
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
1020pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.2W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSOP
Pake / Ka :
SC-74, SOT-457
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