ES6U1T2R Pricing (USD) [701059PC Stock]
- 1 pcs$0.05833
- 8,000 pcs$0.05804
- Nimewo Pati:
- ES6U1T2R
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 12V 1.3A WEMT6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor ES6U1T2R electronic components. ES6U1T2R can be shipped within 24 hours after order. If you have any demands for ES6U1T2R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES6U1T2R Atribi pwodwi yo
Nimewo Pati :
ES6U1T2R
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 12V 1.3A WEMT6
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
260 mOhm @ 1.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2.4nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 6V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WEMT
Pake / Ka :
SOT-563, SOT-666
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