Rohm Semiconductor - SH8M13GZETB

KEY Part #: K6525383

SH8M13GZETB Pricing (USD) [243798PC Stock]

  • 1 pcs$0.16772
  • 2,500 pcs$0.16689

Nimewo Pati:
SH8M13GZETB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MIDDLE POWER MOSFET SERIES DUAL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Zener - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor SH8M13GZETB electronic components. SH8M13GZETB can be shipped within 24 hours after order. If you have any demands for SH8M13GZETB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SH8M13GZETB Atribi pwodwi yo

Nimewo Pati : SH8M13GZETB
Manifakti : Rohm Semiconductor
Deskripsyon : MIDDLE POWER MOSFET SERIES DUAL
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : -
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A, 7A
RD sou (Max) @ Id, Vgs : 29 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 10V
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP