ON Semiconductor - FQPF6P25

KEY Part #: K6410692

[14049PC Stock]


    Nimewo Pati:
    FQPF6P25
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 250V 4.2A TO-220F.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays and Diodes - Rèkteur - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQPF6P25 electronic components. FQPF6P25 can be shipped within 24 hours after order. If you have any demands for FQPF6P25, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQPF6P25 Atribi pwodwi yo

    Nimewo Pati : FQPF6P25
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 250V 4.2A TO-220F
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.2A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 2.1A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 780pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 45W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220F
    Pake / Ka : TO-220-3 Full Pack