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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMA908PZ

ON Semiconductor - FDMA908PZ

KEY Part #: K6417357

FDMA908PZ Pricing (USD) [451444PC Stock]

  • 1 pcs$0.08193
  • 3,000 pcs$0.08092
Nimewo Pati:
FDMA908PZ
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 12V 12A 6QFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Objektif espesyal and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMA908PZ electronic components. FDMA908PZ can be shipped within 24 hours after order. If you have any demands for FDMA908PZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMA908PZ Atribi pwodwi yo

Nimewo Pati : FDMA908PZ
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 12V 12A 6QFN
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 12.5 mOhm @ 12A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 3957pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.4W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-MicroFET (2x2)
Pake / Ka : 6-WDFN Exposed Pad

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