Nexperia USA Inc. - PMZB1200UPEYL

KEY Part #: K6421665

PMZB1200UPEYL Pricing (USD) [1418494PC Stock]

  • 1 pcs$0.02608
  • 10,000 pcs$0.02283

Nimewo Pati:
PMZB1200UPEYL
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 30V SOT883.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMZB1200UPEYL Atribi pwodwi yo

Nimewo Pati : PMZB1200UPEYL
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 30V SOT883
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 410mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 410mA, 4.5V
Vgs (th) (Max) @ Id : 950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 1.2nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 43.2pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 310mW (Ta), 1.67W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DFN1006B-3
Pake / Ka : 3-XFDFN