Nimewo Pati :
SQS481ENW-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 150V 4.7A 1212-8
Seri :
Automotive, AEC-Q101, TrenchFET®
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.095 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
385pF @ 75V
Disipasyon Pouvwa (Max) :
62.5W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8
Pake / Ka :
PowerPAK® 1212-8