STMicroelectronics - STD6N60M2

KEY Part #: K6419893

STD6N60M2 Pricing (USD) [142258PC Stock]

  • 1 pcs$0.26000
  • 2,500 pcs$0.23145

Nimewo Pati:
STD6N60M2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 600V DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STD6N60M2 electronic components. STD6N60M2 can be shipped within 24 hours after order. If you have any demands for STD6N60M2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD6N60M2 Atribi pwodwi yo

Nimewo Pati : STD6N60M2
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 600V DPAK
Seri : MDmesh™ II Plus
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.2 Ohm @ 2.25A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 232pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 60W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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