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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT94N65B2C3G

Microsemi Corporation - APT94N65B2C3G

KEY Part #: K6395142

APT94N65B2C3G Pricing (USD) [3885PC Stock]

  • 1 pcs$12.32704
  • 30 pcs$12.26571
Nimewo Pati:
APT94N65B2C3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 650V 94A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT94N65B2C3G electronic components. APT94N65B2C3G can be shipped within 24 hours after order. If you have any demands for APT94N65B2C3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT94N65B2C3G Atribi pwodwi yo

Nimewo Pati : APT94N65B2C3G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 650V 94A TO-247
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 94A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 35 mOhm @ 47A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 5.8mA
Chaje Gate (Qg) (Max) @ Vgs : 580nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 13940pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 833W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : T-MAX™ [B2]
Pake / Ka : TO-247-3 Variant

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