Infineon Technologies - IRF7904PBF

KEY Part #: K6522892

IRF7904PBF Pricing (USD) [112675PC Stock]

  • 1 pcs$0.40556
  • 10 pcs$0.33973
  • 100 pcs$0.26858
  • 500 pcs$0.20830
  • 1,000 pcs$0.16445

Nimewo Pati:
IRF7904PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 30V 7.6A/11A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRF7904PBF electronic components. IRF7904PBF can be shipped within 24 hours after order. If you have any demands for IRF7904PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF7904PBF Atribi pwodwi yo

Nimewo Pati : IRF7904PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 30V 7.6A/11A 8SOIC
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.6A, 11A
RD sou (Max) @ Id, Vgs : 16.2 mOhm @ 7.6A, 10V
Vgs (th) (Max) @ Id : 2.25V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 910pF @ 15V
Pouvwa - Max : 1.4W, 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO

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