Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 30V 7.6A/11A 8SOIC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.6A, 11A
RD sou (Max) @ Id, Vgs :
16.2 mOhm @ 7.6A, 10V
Vgs (th) (Max) @ Id :
2.25V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
910pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO