DMN2019UTS-13 Pricing (USD) [539680PC Stock]
- 1 pcs$0.06854
- 2,500 pcs$0.06102
- Nimewo Pati:
- DMN2019UTS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 5.4A TSSOP-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2019UTS-13 electronic components. DMN2019UTS-13 can be shipped within 24 hours after order. If you have any demands for DMN2019UTS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2019UTS-13 Atribi pwodwi yo
Nimewo Pati :
DMN2019UTS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 5.4A TSSOP-8
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A
RD sou (Max) @ Id, Vgs :
18.5 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
143pF @ 10V
Pouvwa - Max :
780mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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