DMG8822UTS-13 Pricing (USD) [446296PC Stock]
- 1 pcs$0.08288
- 2,500 pcs$0.04307
- Nimewo Pati:
- DMG8822UTS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 4.9A 8TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG8822UTS-13 electronic components. DMG8822UTS-13 can be shipped within 24 hours after order. If you have any demands for DMG8822UTS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG8822UTS-13 Atribi pwodwi yo
Nimewo Pati :
DMG8822UTS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 4.9A 8TSSOP
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.9A (Ta)
RD sou (Max) @ Id, Vgs :
25 mOhm @ 8.2A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
841pF @ 10V
Pouvwa - Max :
870mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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