STD9HN65M2 Pricing (USD) [171614PC Stock]
- 1 pcs$0.21553
- 2,500 pcs$0.19186
- Nimewo Pati:
- STD9HN65M2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 5.5A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - RF, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STD9HN65M2 electronic components. STD9HN65M2 can be shipped within 24 hours after order. If you have any demands for STD9HN65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD9HN65M2 Atribi pwodwi yo
Nimewo Pati :
STD9HN65M2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 5.5A DPAK
Seri :
MDmesh™ M2
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
820 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11.5nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
325pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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