Nimewo Pati :
SSM6L36FE,LM
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N/P-CH 20V 0.5A/0.33A ES6
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
500mA, 330mA
RD sou (Max) @ Id, Vgs :
630 mOhm @ 200mA, 5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
1.23nC @ 4V
Antre kapasite (Ciss) (Max) @ Vds :
46pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6 (1.6x1.6)