ON Semiconductor - FGY120T65SPD-F085

KEY Part #: K6423411

FGY120T65SPD-F085 Pricing (USD) [8478PC Stock]

  • 1 pcs$4.86092

Nimewo Pati:
FGY120T65SPD-F085
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 650V 240A 882W TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Modil pouvwa chofè and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FGY120T65SPD-F085 electronic components. FGY120T65SPD-F085 can be shipped within 24 hours after order. If you have any demands for FGY120T65SPD-F085, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGY120T65SPD-F085 Atribi pwodwi yo

Nimewo Pati : FGY120T65SPD-F085
Manifakti : ON Semiconductor
Deskripsyon : IGBT 650V 240A 882W TO-247
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 240A
Kouran - Pèseptè batman (Icm) : 378A
Vce (sou) (Max) @ Vge, Ic : 1.85V @ 15V, 120A
Pouvwa - Max : 882W
Oblije chanje enèji : 6.8µJ (on), 3.5µJ (off)
Kalite Antre : Standard
Gate chaje : 162nC
Td (on / off) @ 25 ° C : 53ns/102ns
Kondisyon egzamen an : 400V, 120A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 123ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Exposed Pad
Pake Aparèy Founisè : PowerTO-247-3