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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCP099N65S3

ON Semiconductor - FCP099N65S3

KEY Part #: K6397431

FCP099N65S3 Pricing (USD) [40452PC Stock]

  • 1 pcs$0.96657
Nimewo Pati:
FCP099N65S3
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 650V 30A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCP099N65S3 electronic components. FCP099N65S3 can be shipped within 24 hours after order. If you have any demands for FCP099N65S3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP099N65S3 Atribi pwodwi yo

Nimewo Pati : FCP099N65S3
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 650V 30A TO220-3
Seri : SuperFET® III
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 99 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs : 61nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2480pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 227W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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