IRFB7787PBF Pricing (USD) [56337PC Stock]
- 1 pcs$0.66478
- 10 pcs$0.58868
- 100 pcs$0.46514
- 500 pcs$0.34122
- 1,000 pcs$0.26938
- Nimewo Pati:
- IRFB7787PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 75V 83A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - JFETs, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFB7787PBF electronic components. IRFB7787PBF can be shipped within 24 hours after order. If you have any demands for IRFB7787PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB7787PBF Atribi pwodwi yo
Nimewo Pati :
IRFB7787PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 75V 83A TO220
Seri :
HEXFET®, StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
76A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
8.4 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
109nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4020pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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