Vishay Semiconductor Diodes Division - BYV38-TAP

KEY Part #: K6455325

BYV38-TAP Pricing (USD) [460696PC Stock]

  • 1 pcs$0.08029
  • 25,000 pcs$0.07752

Nimewo Pati:
BYV38-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 1KV 2A SOD57. Rectifiers 2.0 Amp 1000 Volt 50 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYV38-TAP electronic components. BYV38-TAP can be shipped within 24 hours after order. If you have any demands for BYV38-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYV38-TAP Atribi pwodwi yo

Nimewo Pati : BYV38-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 1KV 2A SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 300ns
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 175°C

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