Nimewo Pati :
SIHA6N65E-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHANNEL 650V 7A TO220
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1640pF @ 100V
Disipasyon Pouvwa (Max) :
31W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Full Pack
Pake / Ka :
TO-220-3 Full Pack