Vishay Siliconix - SIHG73N60AEL-GE3

KEY Part #: K6397367

SIHG73N60AEL-GE3 Pricing (USD) [6466PC Stock]

  • 1 pcs$6.37252

Nimewo Pati:
SIHG73N60AEL-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CHAN 600V TO-247AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHG73N60AEL-GE3 electronic components. SIHG73N60AEL-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG73N60AEL-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHG73N60AEL-GE3 Atribi pwodwi yo

Nimewo Pati : SIHG73N60AEL-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CHAN 600V TO-247AC
Seri : EL
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 69A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 42 mOhm @ 36.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 342nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6709pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 520W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AC
Pake / Ka : TO-247-3