Diodes Incorporated - ZXMN3A04DN8TC

KEY Part #: K6524560

[3791PC Stock]


    Nimewo Pati:
    ZXMN3A04DN8TC
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET 2N-CH 30V 6.5A 8SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZXMN3A04DN8TC electronic components. ZXMN3A04DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN3A04DN8TC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN3A04DN8TC Atribi pwodwi yo

    Nimewo Pati : ZXMN3A04DN8TC
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET 2N-CH 30V 6.5A 8SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A
    RD sou (Max) @ Id, Vgs : 20 mOhm @ 12.6A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
    Chaje Gate (Qg) (Max) @ Vgs : 36.8nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 1890pF @ 15V
    Pouvwa - Max : 1.81W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOP