IRF9610PBF Pricing (USD) [53136PC Stock]
- 1 pcs$0.66060
- 10 pcs$0.58618
- 100 pcs$0.46309
- 500 pcs$0.33973
- 1,000 pcs$0.26821
- Nimewo Pati:
- IRF9610PBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 200V 1.8A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - IGBTs - Single, Diodes - Zener - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRF9610PBF electronic components. IRF9610PBF can be shipped within 24 hours after order. If you have any demands for IRF9610PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9610PBF Atribi pwodwi yo
Nimewo Pati :
IRF9610PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 200V 1.8A TO-220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
170pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
20W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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