NTD4979N-35G Pricing (USD) [357223PC Stock]
- 1 pcs$0.10354
- 2,175 pcs$0.09441
- Nimewo Pati:
- NTD4979N-35G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 9.4A IPAK TRIMME.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTD4979N-35G electronic components. NTD4979N-35G can be shipped within 24 hours after order. If you have any demands for NTD4979N-35G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTD4979N-35G Atribi pwodwi yo
Nimewo Pati :
NTD4979N-35G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 30V 9.4A IPAK TRIMME
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
837pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.38W (Ta), 26.3W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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