Diodes Incorporated - ZXMC6A09DN8TA

KEY Part #: K6522813

ZXMC6A09DN8TA Pricing (USD) [73350PC Stock]

  • 1 pcs$0.53308
  • 500 pcs$0.48291

Nimewo Pati:
ZXMC6A09DN8TA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N/P-CH 60V 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Diodes Incorporated ZXMC6A09DN8TA electronic components. ZXMC6A09DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMC6A09DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMC6A09DN8TA Atribi pwodwi yo

Nimewo Pati : ZXMC6A09DN8TA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N/P-CH 60V 8-SOIC
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A, 3.7A
RD sou (Max) @ Id, Vgs : 45 mOhm @ 8.2A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs : 24.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1407pF @ 40V
Pouvwa - Max : 1.8W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP