Vishay Siliconix - SIA911ADJ-T1-GE3

KEY Part #: K6525455

SIA911ADJ-T1-GE3 Pricing (USD) [431769PC Stock]

  • 1 pcs$0.08567
  • 3,000 pcs$0.08092

Nimewo Pati:
SIA911ADJ-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2P-CH 20V 4.5A SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIA911ADJ-T1-GE3 electronic components. SIA911ADJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA911ADJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA911ADJ-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIA911ADJ-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 20V 4.5A SC70-6
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A
RD sou (Max) @ Id, Vgs : 116 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 345pF @ 10V
Pouvwa - Max : 6.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SC-70-6 Dual
Pake Aparèy Founisè : PowerPAK® SC-70-6 Dual