Toshiba Semiconductor and Storage - SSM6L35FU(TE85L,F)

KEY Part #: K6522760

SSM6L35FU(TE85L,F) Pricing (USD) [1105454PC Stock]

  • 1 pcs$0.03381
  • 3,000 pcs$0.03364
  • 6,000 pcs$0.03177
  • 15,000 pcs$0.02897
  • 30,000 pcs$0.02710
  • 75,000 pcs$0.02430

Nimewo Pati:
SSM6L35FU(TE85L,F)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N/P-CH 20V 0.18A/0.1A US6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6L35FU(TE85L,F) Atribi pwodwi yo

Nimewo Pati : SSM6L35FU(TE85L,F)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N/P-CH 20V 0.18A/0.1A US6
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate, 1.2V Drive
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180mA, 100mA
RD sou (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 9.5pF @ 3V
Pouvwa - Max : 200mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : US6