TP65H035WSQA Pricing (USD) [4296PC Stock]
- 1 pcs$10.08141
- Nimewo Pati:
- TP65H035WSQA
- Manifakti:
- Transphorm
- Detaye deskripsyon:
- GANFET N-CH 650V 47A TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Transphorm TP65H035WSQA electronic components. TP65H035WSQA can be shipped within 24 hours after order. If you have any demands for TP65H035WSQA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TP65H035WSQA Atribi pwodwi yo
Nimewo Pati :
TP65H035WSQA
Manifakti :
Transphorm
Deskripsyon :
GANFET N-CH 650V 47A TO247-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
47A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
41 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1500pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
187W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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