ON Semiconductor - FDC6306P

KEY Part #: K6522423

FDC6306P Pricing (USD) [577648PC Stock]

  • 1 pcs$0.06435
  • 3,000 pcs$0.06403

Nimewo Pati:
FDC6306P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2P-CH 20V 1.9A SSOT6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDC6306P electronic components. FDC6306P can be shipped within 24 hours after order. If you have any demands for FDC6306P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDC6306P Atribi pwodwi yo

Nimewo Pati : FDC6306P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2P-CH 20V 1.9A SSOT6
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.9A
RD sou (Max) @ Id, Vgs : 170 mOhm @ 1.9A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 441pF @ 10V
Pouvwa - Max : 700mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : SuperSOT™-6

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