Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2P-CH 20V 1.9A SSOT6
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A
RD sou (Max) @ Id, Vgs :
170 mOhm @ 1.9A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
441pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
SuperSOT™-6