Nimewo Pati :
NTD3813N-35G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 16V 9.6A IPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
16V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
8.75 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
963pF @ 12V
Disipasyon Pouvwa (Max) :
1.2W (Ta), 34.9W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Stub Leads, IPak