Nimewo Pati :
IPA65R650CEXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V TO-220-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
440pF @ 100V
Disipasyon Pouvwa (Max) :
28W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Full Pack
Pake / Ka :
TO-220-3 Full Pack