Infineon Technologies - IPA65R650CEXKSA1

KEY Part #: K6402077

IPA65R650CEXKSA1 Pricing (USD) [71938PC Stock]

  • 1 pcs$0.47663
  • 10 pcs$0.42186
  • 100 pcs$0.31549
  • 500 pcs$0.24467
  • 1,000 pcs$0.19316

Nimewo Pati:
IPA65R650CEXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V TO-220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Infineon Technologies IPA65R650CEXKSA1 electronic components. IPA65R650CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA65R650CEXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA65R650CEXKSA1 Atribi pwodwi yo

Nimewo Pati : IPA65R650CEXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V TO-220-3
Seri : CoolMOS™ CE
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 210µA
Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 440pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 28W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220 Full Pack
Pake / Ka : TO-220-3 Full Pack

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