Vishay Siliconix - SQD100N03-3M4_GE3

KEY Part #: K6419588

SQD100N03-3M4_GE3 Pricing (USD) [119955PC Stock]

  • 1 pcs$0.30834

Nimewo Pati:
SQD100N03-3M4_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 30V 100A TO252AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - JFETs, Modil pouvwa chofè, Tiristors - DIACs, SIDACs and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQD100N03-3M4_GE3 electronic components. SQD100N03-3M4_GE3 can be shipped within 24 hours after order. If you have any demands for SQD100N03-3M4_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD100N03-3M4_GE3 Atribi pwodwi yo

Nimewo Pati : SQD100N03-3M4_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 100A TO252AA
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 124nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7349pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 136W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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