TK7A90E,S4X Pricing (USD) [55337PC Stock]
- 1 pcs$0.77767
- 50 pcs$0.62782
- 100 pcs$0.56502
- 500 pcs$0.43945
- 1,000 pcs$0.34443
- Nimewo Pati:
- TK7A90E,S4X
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 900V TO220SIS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Modil pouvwa chofè and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK7A90E,S4X electronic components. TK7A90E,S4X can be shipped within 24 hours after order. If you have any demands for TK7A90E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK7A90E,S4X Atribi pwodwi yo
Nimewo Pati :
TK7A90E,S4X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 900V TO220SIS
Seri :
π-MOSVIII
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
45W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
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