Nimewo Pati :
TK7A90E,S4X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 900V TO220SIS
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 25V
Disipasyon Pouvwa (Max) :
45W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack