FDP020N06B-F102 Pricing (USD) [16151PC Stock]
- 1 pcs$2.55165
- Nimewo Pati:
- FDP020N06B-F102
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 120A TO-220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDP020N06B-F102 electronic components. FDP020N06B-F102 can be shipped within 24 hours after order. If you have any demands for FDP020N06B-F102, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDP020N06B-F102 Atribi pwodwi yo
Nimewo Pati :
FDP020N06B-F102
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 60V 120A TO-220-3
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
268nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
20930pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
333W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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