IRLR3717PBF Pricing (USD) [13526PC Stock]
- 3,000 pcs$0.23406
- Nimewo Pati:
- IRLR3717PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 120A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - Bridge rèktifikateur and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLR3717PBF electronic components. IRLR3717PBF can be shipped within 24 hours after order. If you have any demands for IRLR3717PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR3717PBF Atribi pwodwi yo
Nimewo Pati :
IRLR3717PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 120A DPAK
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.45V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2830pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
89W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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