PSMN4R3-100ES,127 Pricing (USD) [26643PC Stock]
- 1 pcs$1.54686
- 10 pcs$1.38159
- 100 pcs$1.07481
- 500 pcs$0.87033
- 1,000 pcs$0.73402
- Nimewo Pati:
- PSMN4R3-100ES,127
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 120A I2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - IGBTs - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN4R3-100ES,127 electronic components. PSMN4R3-100ES,127 can be shipped within 24 hours after order. If you have any demands for PSMN4R3-100ES,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN4R3-100ES,127 Atribi pwodwi yo
Nimewo Pati :
PSMN4R3-100ES,127
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 100V 120A I2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9900pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
338W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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